TIM5964-60SL
MICROWAVE POWER GaAs FET
FEATURES
ï½¥BROAD BAND INTERNALLY MATCHED FET
ï½¥HIGH POWER
P1dB= 48.0dBm at 5.9GHz to 6.4GHz
ï½¥HIGH GAIN
G1dB= 8.5dB at 5.9GHz to 6.4GHz
ï½¥LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.5dBm
Single Carrier Level
ï½¥HERMETICALLY SEALED PACKAGE
Datasheet TIM5964-60SL Klik Disini