TIM5964-60SL Toshiba

MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TIM5964-60SL

FEATURES
– LOW INTERMODULATION DISTORTION

HIGH GAIN
IM3=-45 dBc at Pout= 36.5dBm G1dB=8.5dB at 5.9GHz to 6.4GHz
Single Carrier Level

-BROAD BAND INTERNALLY MATCHED FET
-HIGH POWER
HERMETICALLY SEALED PACKAGE
P1dB=48.0dBm at 5.9GHz to 6.4GHz

Datasheet Klik Disini