Deskripsi
N-Channel Power MOSFET
600V, 18A, 0.19Ω
FEATURES
● Super-Junction technology
● High performance, small RDS(ON)*Qg figure of merit (FOM)
● High ruggedness performance
● 100% UIS tested
● High commutation performance
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Power Supply
● AC/DC LED Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER VALUE UNIT
VDS 600 V
RDS(on) (max) 0.19 Ω
Qg 31 nC
