Description
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TIM5964-60SL
FEATURES
– LOW INTERMODULATION DISTORTION
HIGH GAIN
IM3=-45 dBc at Pout= 36.5dBm G1dB=8.5dB at 5.9GHz to 6.4GHz
Single Carrier Level
-BROAD BAND INTERNALLY MATCHED FET
-HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=48.0dBm at 5.9GHz to 6.4GHz
Datasheet Klik DisiniÂ
