APT75GN120

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability

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Deskripsi

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability

Datasheet Klik Disini