Deskripsi
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
DC−DC Converter, Relay Drive and Motor Drive
Applications
– Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
– High forward transfer admittance : |Yfs| = 7.0 S (typ.)
– Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
– Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Datasheet Klik Disini
