TIM5964-60SL Toshiba

TIM5964-60SL Toshiba

A

TIM5964-60SL

MICROWAVE POWER GaAs FET

FEATURES
BROAD BAND INTERNALLY MATCHED FET
・HIGH POWER
P1dB= 48.0dBm at 5.9GHz to 6.4GHz
・HIGH GAIN
G1dB= 8.5dB at 5.9GHz to 6.4GHz
・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.5dBm
Single Carrier Level
・HERMETICALLY SEALED PACKAGE

Datasheet TIM5964-60SL  Klik Disini