Features
• Single Supply for Read and Write: 2.7V to 5.5V
• Fast Read Access Time – 70 ns (VCC = 2.7V to 3.6V); 55 ns (VCC = 4.5V to 5.5V)
• Internal Program Control and Timer
• Flexible Sector Architecture
– One 16K Bytes Boot Sector with Programming Lockout
– Two 8K Bytes Parameter Sectors
– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes)
• Fast Erase Cycle Time – 8 Seconds
• Byte-by-Byte Programming – 10 µs/Byte Typical
• Hardware Data Protection
• DATA Polling or Toggle Bit for End of Program Detection
• Low Power Dissipation
– 20 mA Active Current
– 25 µA CMOS Standby Current for VCC = 2.7V to 3.6V
– 30 µA CMOS Standby Current for VCC = 4.5V to 5.5V
• Minimum 100,000 Write Cycles
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