TIM5964-60SL Toshiba
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-60SL FEATURES – LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45 dBc at Pout= 36.5dBm G1dB=8.5dB at 5.9GHz to 6.4GHz Single Carrier Level -BROAD BAND INTERNALLY MATCHED FET -HIGH POWER HERMETICALLY SEALED PACKAGE P1dB=48.0dBm at 5.9GHz to 6.4GHz Datasheet Klik Disini