Jual TIM5964-60SL Toshiba

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-60SL FEATURES – LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45 dBc at Pout= 36.5dBm G1dB=8.5dB at 5.9GHz to 6.4GHz Single Carrier Level -BROAD BAND INTERNALLY MATCHED FET -HIGH POWER
HERMETICALLY SEALED PACKAGE P1dB=48.0dBm at 5.9GHz to 6.4GHz Datasheet Klik Disini   

TIM5964-60SL MICROWAVE POWER GaAs FET FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE Datasheet TIM5964-60SL  Klik Disini