SKM150GB125D

Deskripsi

Features
• N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
• Ultra fast with heavy metal
doping 4)
• Low inductance case
• Almost no tail current
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
• Large clearance (12 mm) and
creepage distances (20 mm)

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