TIM5964-60SL Toshiba
TIM5964-60SL MICROWAVE POWER GaAs FET FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE Datasheet TIM5964-60SL Klik Disini